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| Si2306BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.047 at VGS = 10 V 0.065 at VGS = 4.5 V ID (A) 4.0 3.5 Qg (Typ.) 3.0 FEATURES * Halogen-free Option Available * TrenchFET(R) Power MOSFET * 100 % Rg Tested RoHS COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2306BDS (L6 )* * Marking Code Ordering Information: SI2306BDS-T1-E3 (Lead (Pb)-free) Si2306BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25 C TA = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS PD TJ, Tstg 1.04 1.25 0.8 - 55 to 150 4.0 3.5 20 0.62 0.75 0.48 W C 5s 30 20 3.16 2.7 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 board, t 5 s. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 73234 S-80642-Rev. B, 24-Mar-08 www.vishay.com 1 t5s Steady State Steady State Symbol RthJA RthJF Typical 80 130 60 Maximum 100 166 75 C/W Unit Si2306BDS Vishay Siliconix SPECIFICATIONS TA = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) Test Conditions VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 C VDS 4.5 V, VGS = 10 V VGS = 10 V, ID = 3.5 A VGS = 4.5 V, ID = 2.8 A VDS = 4.5 V, ID = 2.5 A IS = 1.25 A, VGS = 0 V VDS = 15 V, VGS = 5 V, ID = 2.5 A VDS = 15 V, VGS = 10 V, ID = 2.5 A f = 1.0 MHz VDS = 15 V, VGS = 0 V, f = 1 MHz 2.5 Min. 30 1.0 Limits Typ. Max. Unit 3.0 100 0.5 10 0.038 0.052 7.0 0.8 3.0 6 1.6 0.6 5 305 65 29 7 12 14 6 14 6 0.047 0.065 1.2 4.5 9 V nA A A S V 6 gfs Forward Transconductancea VSD Diode Forward Voltage Dynamic Qg Gate Charge Qgt Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time trr Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Notes: a. Pulse test: Pulse width 300 s, duty cycle 2 %. nC 7.5 pF VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, Rg = 6 IF = 1.25 A, di/dt = 100 A/s 11 18 25 10 21 10 ns nC Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 VGS = 10 thru 5 V 16 I D - Drain Current (A) 20 4V I D - Drain Current (A) 16 12 12 8 8 TC = 125 C 4 25 C 4 3V 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) - 55 C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Output Characteristics www.vishay.com 2 Transfer Characteristics Document Number: 73234 S-80642-Rev. B, 24-Mar-08 Si2306BDS Vishay Siliconix TYPICAL CHARACTERISTICS 0.10 25 C, unless otherwise noted 400 350 R DS(on) - On-Resistance () 0.08 300 C - Capacitance (pF) 0.06 250 200 150 100 0.02 50 0.00 0 2 4 6 8 10 12 14 16 0 0 5 10 Crss Ciss VGS = 4.5 V VGS = 10 V 0.04 Coss 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 VDS = 15 V ID = 3.5 A 8 R DS(on) - On-Resistance 1.4 1.6 VGS = 10 V ID = 3.5 A Capacitance VGS - Gate-to-Source Voltage (V) 6 (Normalized) 1.2 4 1.0 2 0.8 0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) Gate Charge 10 0.5 On-Resistance vs. Junction Temperature R DS(on) - On-Resistance () 0.4 ID = 3.5 A 0.3 I S - Source Current (A) TJ = 150 C TJ = 25 C 1 0.2 0.1 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 73234 S-80642-Rev. B, 24-Mar-08 www.vishay.com 3 Si2306BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.4 10 0.2 ID = 250 A V GS(th) Variance (V) 0.0 Power (W) 8 6 TA = 25 C Single Pulse - 0.2 4 - 0.4 2 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 TJ - Temperature (C) 125 150 0 0.01 0.1 1 Time (s) 10 100 600 Threshold Voltage 100 Limited by RDS(on)* 10 I D - Drain Current (A) 100 s 1 1 ms 10 ms 0.1 TA = 25 C Single Pulse 100 ms IDM Limited 10 s Single Pulse Power DC, 100 s, 10 s, 1 s 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 130 C/W Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 3. T JM - T A = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73234. www.vishay.com 4 Document Number: 73234 S-80642-Rev. B, 24-Mar-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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